This thesis propose power amplifier CLASS G circuit with property of power electronic device to reduce power loss, response frequency range 10 – 20,000 Hz and get rid of oscillatory problem.
This project studied characteristic of power amplifier CLASS G by using TOSHIBA MOSFET silicon N channel type number 2SK1530 and MOSFET silicon P Channel type number 2SJ201 to control 2 level voltage source following CLASS G rule and power amplifier have more efficiency.
This high efficiency power amplifier give power output 378 Wrms at resistant load 8 ohm and have input sensitivity 3.6 Vrms.
By
Pinan Plabcharernsuk
Alongkorna Klomjitcharern
